New materials are opportunities for Chinese companies
“In the past 20 years, a lot of patents have been generated around IGBT devices, and companies in Europe, the US and Japan have already formed huge technological advantages in this field.†Lan Jian, Vice President, Marketing and Application Engineering, Fairchild Semiconductor Asia Pacific In an interview with China Electronics News, Bronze said, "If only silicon-based IGBTs are used, I think it is difficult for Chinese local companies to compete. However, if new materials such as compound semiconductors are used, the IGBT industry will be introduced into a new one. The competition platform, Chinese companies still have opportunities in this field. However, in my opinion, the maturity of new materials will take about 10 years."
Wine rack,stainless steel wine rack,Iron wine rack, wine holder,Goblet Holder
wire holder is made of high quality 304 stainless steel, It is easier to clean without rust, safe, healthy and durable, Prevent rust or chemicals from contaminating food and damaging health. Suitable for putting wire bottle.
China leading manufacturers and suppliers of Wine Holder,Wine Bottle Holder, and we are specialize in Wine Rack,Hanging Wine Rack, etc.
Bar tools,Wine rack,stainless steel wine rack,Iron wine rack,wine holder,Goblet holder Shenzhen Lanejoy Technology Co.,LTD , https://www.wirefruitbasket.com
According to the introduction of the special professor of Yangtze River, School of Electrical Engineering, Zhejiang University, silicon carbide, gallium nitride and diamond are three common wide-bandgap semiconductor materials. At present, many foreign companies have mass-produced 4-inch silicon carbide wafers, 6 inches. Silicon carbide wafers will also emerge soon, making silicon carbide the most mature of the three wide bandgap materials, providing a solid foundation for the development of silicon carbide power devices. "However, because of the high price of silicon carbide single wafers and epitaxial materials, the price of silicon carbide devices is quite high, which has become a threshold for their large-scale market applications." Sheng added.
Foreign companies have not neglected the research and development of new materials and new devices. “From three years from 2009 to 2011, we will focus on developing silicon carbide devices.†Nishimura said, “Because of the high cost of silicon carbide devices, the market’s acceptance of such devices depends on how To what extent the overall cost of the system is reduced. For example, on high-speed electric trains, if a silicon-based IGBT is used, a large cooling device is required; but if a silicon carbide device is used, the cooling device can be miniaturized or even saved. Going, this is very attractive for high-speed trains. Therefore, SiC devices will gradually take advantage of them in specific areas."