Progress in research on black phosphorus doping modification in Suzhou Nano Institute
Fig. 1. (a) Schematic diagram of SixNy field-induced N-doped black phosphorus; (b) Isd-Vg curves of pre- and post-doped black phosphorus field-effect transistors; (c) Different SixNy-doped black phosphorus field-effect transistors The transmission characteristic under temperature, Vsd=100mV; (d) SixNy-doped black phosphorus field effect transistor exposed to air for one month, its transmission characteristics under different phases, test conditions: room temperature, Vsd=100mV; (e ) The relationship between the electron hole mobility and the temperature of the black phosphorus after doping before doping; (f) The curve of the electron and hole mobility with time after the doping of the black phosphorus device. Figure 2. (a) Optical image of a black phosphorus PN diode; (b) Isd-Vsd curve of a black phosphor FET and a black phosphorus PN diode; (c) Black PN diodes at different gate voltages Isd-Vsd curve; (d) Relation curve of the rectification ratio and the gate voltage of the black phosphorus PN diode. Figure 3. (a) Schematic diagram of a black phosphorus logic inverter constructed based on the original P-type black phosphor channel and doped N-type black phosphor channel of a single black phosphor plate; (b) under different applied bias voltages. The relationship between the output voltage and the input voltage, the illustration is gain; (c) The output voltage and input voltage curve of the device at 100Hz frequency; (d) The output voltage and input voltage curve of the device at 1000Hz frequency. Black phosphorus, as a new two-dimensional material, has a tunable band gap (through thickness regulation) and electron mobility greater than 1000 cm2V-1 s-1, which can both compensate for the lack of graphene zero band gap and also overcome the TMDCs. The disadvantage of low mobility mobility is an excellent candidate for high performance nanoelectronic devices. Intrinsic black phosphorus is a P-type material with a strong hole transport capability but poor electron transport capability. The unipolarity makes it difficult for black phosphorus to function on complementary devices. Therefore, N-type doping of black phosphorus is an important measure for the application of black phosphorus in the field of semiconductor devices (such as logic gates, photodiodes, LEDs, and solar cells). There are three methods for performing N-type doping on black phosphorus. Substitution doping methods, including ion implantation and plasma processing; surface charge transfer methods involving gas molecules, metal particles, organics, and oxides; field-induced doping methods, substitution doping methods can make a few 2D materials complete Type doping, but introducing a defect state and the charge scattering center of the charge leads to a serious degradation of the carrier transport characteristics. The surface charge transfer method is an effective method of doping, but the organic materials introduced in the surface charge transfer method may cause instability of the device and make the compatibility of the device and the conventional semiconductor device poor. SixNy, commonly used in field-induced doping, has a high-density positive charge center (K+ center) that originates from the dangling bond of +Si≡N3. Field-induced doping with SixNy has been applied to silicon-based solar cells and WSe2 two-dimensional devices. In addition, SixNy is a traditional COMS-compatible material commonly used as an insulating layer and chemical barrier in integrated circuits, and SixNy is also a waterproof passivation material. To date, it has been useless to report the N-type doping of black phosphorus using the field effect of SixNy. Zhang Kai, researcher of the Suzhou Institute of Nanotechnology and Nano-Bionics, Chinese Academy of Sciences, devoted himself to the research of growth, doping modification, device preparation and testing of black phosphorus. In the previous period, they studied the growth of selenium with a mineralizer assisted gas phase transformation method. Doped with black phosphorus and applications in photodetectors and femtosecond lasers, related work was published on small and J. Mater. Chem. C. Based on the above research results, Zhang Kai and other researchers recently cooperated with Professor Zhang Qian of Shenzhen University to study the use of SixNy with field effect to dope N-type black phosphorus and convert P-type black phosphorus into N-type black phosphorus. The electron mobility reaches 176cm2V-1s-1. In addition, the researchers constructed a black phosphorus PN junction diode through the original P-type black phosphorus and doped N-type black phosphorus, and further prepared a new type of black-phosphorus-based logic inverter. The researchers used nonvolatile, CMOS-compatible, and well-stabilized SixNy N-doping of black phosphorus, and designed a black-phosphor plane PN-type diode and a black-phosphor logical inverter. This strategy is also used for other two-dimensional materials. The doping provides a feasible solution. The result was published on Advanced Functional Materials. The research work was supported by the "100-person plan" of the Chinese Academy of Sciences, the National Natural Science Foundation, and the Natural Science Foundation of Jiangsu Province. Smart Mirror,Ceramic Glass,Smart Silver Mirror,Smart Bathroom Mirror SHANDONG TOP LEADER GLASS CO.,LTD , https://www.topleaderglass.com
